SI7135DP MOSFET Transistor

The SI7135DP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7135DP transistor as follows.

SI7135DP Transistor Specification

Transistor Code		SI7135DP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK-SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	31.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0039Ohm
Power Dissipation (Maximum)	PD	6.25W
Drain-Source Capacitance		1215pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		167nC

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