SHD239607 MOSFET Transistor

The SHD239607 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD239607 transistor as follows.

SHD239607 Transistor Specification

Transistor Code		SHD239607
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SHD-6
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	450W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		43nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		150nC

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