RW1C025ZP MOSFET Transistor

The RW1C025ZP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RW1C025ZP transistor as follows.

RW1C025ZP Transistor Specification

Transistor Code		RW1C025ZP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		WEMT6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	0.7W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS

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