RU6888M MOSFET Transistor

The RU6888M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU6888M transistor as follows.

RU6888M Transistor Specification

Transistor Code		RU6888M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN5060
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	4.2W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		4V

RU6888M MOSFET Transistor Overview

The RU6888M is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a PDFN5060 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the RU6888M MOSFET

Followings are the key electrical characteristics of the RU6888M MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in RU6888M MOSFET transistor is 60V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the RU6888M MOSFET transistor is 25V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the RU6888M MOSFET transistor is 16A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of RU6888M MOSFET transistor when the transistor is fully turned on is 0.008 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the RU6888M MOSFET transistor can comfortably transfer into heat without breaking is 4.2W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Drain-Source Capacitance

The capacitance between drain and source of the RU6888M MOSFET transistor is 310pF. This value influences to the switching speed of the RU6888M MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

• Rise Time

The time that the drain current or output voltage increases between low to high when the RU6888M MOSFET transistor is switched on is 32nS. This is the rate at which RU6888M MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the RU6888M MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of RU6888M MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the RU6888M MOSFET transistor. You can download the official RU6888M MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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