RJU003N03T106 MOSFET Transistor

The RJU003N03T106 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJU003N03T106 transistor as follows.

RJU003N03T106 Transistor Specification

Transistor Code		RJU003N03T106
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UMT3
Transistor SMD Code		LP
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		11pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		1.5V

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