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RFM12N10L MOSFET Transistor

The RFM12N10L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFM12N10L transistor as follows.

Circuit diagram symbol of the RFM12N10L transistor

RFM12N10L Transistor Specification

Transistor Code RFM12N10L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-204AA
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 325pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 2V

RFM12N10L MOSFET Transistor Overview

The RFM12N10L is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-204AA package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the RFM12N10L MOSFET

Followings are the key electrical characteristics of the RFM12N10L MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in RFM12N10L MOSFET transistor is 100V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the RFM12N10L MOSFET transistor is 10V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the RFM12N10L MOSFET transistor is 12A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of RFM12N10L MOSFET transistor when the transistor is fully turned on is 0.2 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the RFM12N10L MOSFET transistor can comfortably transfer into heat without breaking is 75W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the RFM12N10L MOSFET transistor is 325pF. This value influences to the switching speed of the RFM12N10L MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the RFM12N10L MOSFET transistor is switched on is 70nS. This is the rate at which RFM12N10L MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the RFM12N10L MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of RFM12N10L MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the RFM12N10L MOSFET transistor. You can download the official RFM12N10L MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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