PE5A0DZ MOSFET Transistor

The PE5A0DZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PE5A0DZ transistor as follows.

PE5A0DZ Transistor Specification

Transistor Code		PE5A0DZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN3X3S
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	31W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS

PE5A0DZ MOSFET Transistor Overview

The PE5A0DZ is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a PDFN3X3S package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the PE5A0DZ MOSFET

Followings are the key electrical characteristics of the PE5A0DZ MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in PE5A0DZ MOSFET transistor is 20V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the PE5A0DZ MOSFET transistor is 8V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the PE5A0DZ MOSFET transistor is 55A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of PE5A0DZ MOSFET transistor when the transistor is fully turned on is 0.006 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the PE5A0DZ MOSFET transistor can comfortably transfer into heat without breaking is 31W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Drain-Source Capacitance

The capacitance between drain and source of the PE5A0DZ MOSFET transistor is 320pF. This value influences to the switching speed of the PE5A0DZ MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

• Rise Time

The time that the drain current or output voltage increases between low to high when the PE5A0DZ MOSFET transistor is switched on is 40nS. This is the rate at which PE5A0DZ MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the PE5A0DZ MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of PE5A0DZ MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the PE5A0DZ MOSFET transistor. You can download the official PE5A0DZ MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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