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NTE4151P MOSFET Transistor

The NTE4151P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NTE4151P transistor as follows.

Circuit diagram symbol of the NTE4151P transistor

NTE4151P Transistor Specification

Transistor Code NTE4151P
Transistor Type MOSFET
Control Channel Type P-Channel
Package SC89
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 6V
Drain Current (Maximum) ID 0.76A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.26Ohm
Power Dissipation (Maximum) PD 0.313W

NTE4151P MOSFET Transistor Overview

The NTE4151P is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SC89 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the NTE4151P MOSFET

Followings are the key electrical characteristics of the NTE4151P MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in NTE4151P MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the NTE4151P MOSFET transistor is 6V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the NTE4151P MOSFET transistor is 0.76A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of NTE4151P MOSFET transistor when the transistor is fully turned on is 0.26 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the NTE4151P MOSFET transistor can comfortably transfer into heat without breaking is 0.313W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the NTE4151P MOSFET transistor is switched on is . This is the rate at which NTE4151P MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the NTE4151P MOSFET transistor. You can download the official NTE4151P MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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