MMDF1N05E MOSFET Transistor

The MMDF1N05E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMDF1N05E transistor as follows.

MMDF1N05E Transistor Specification

Transistor Code		MMDF1N05E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOIC8
Transistor SMD Code		F1N05
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	2W
Total Gate Charge		12.5nC

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