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MMDF1N05E MOSFET Transistor

The MMDF1N05E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMDF1N05E transistor as follows.

Circuit diagram symbol of the MMDF1N05E transistor

MMDF1N05E Transistor Specification

Transistor Code MMDF1N05E
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOIC8
Transistor SMD Code F1N05
Drain-Source Voltage (Maximum) VDS 50V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 2W
Total Gate Charge 12.5nC

MMDF1N05E MOSFET Transistor Overview

The MMDF1N05E is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOIC8 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the MMDF1N05E MOSFET

Followings are the key electrical characteristics of the MMDF1N05E MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in MMDF1N05E MOSFET transistor is 50V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the MMDF1N05E MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the MMDF1N05E MOSFET transistor is 2A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of MMDF1N05E MOSFET transistor when the transistor is fully turned on is 0.3 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the MMDF1N05E MOSFET transistor can comfortably transfer into heat without breaking is 2W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the MMDF1N05E MOSFET transistor is switched on is . This is the rate at which MMDF1N05E MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the MMDF1N05E MOSFET transistor. You can download the official MMDF1N05E MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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