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KTJ6131V MOSFET Transistor

The KTJ6131V is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KTJ6131V transistor as follows.

Circuit diagram symbol of the KTJ6131V transistor

KTJ6131V Transistor Specification

Transistor Code KTJ6131V
Transistor Type MOSFET
Control Channel Type P-Channel
Package VSM
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.05A
Drain-Source On-State Resistance (Maximum) RDS(on) 40Ohm
Power Dissipation (Maximum) PD 0.1W
Operating Junction Temperature (Maximum) 150°C

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