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KP8N60F MOSFET Transistor

The KP8N60F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KP8N60F transistor as follows.

KP8N60F Transistor Specification

Transistor Code		KP8N60F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220IS
Drain-Source Voltage (Maximum)	V_DS	600V
Gate-Source Voltage (Maximum)	V_GS	30V
Drain Current (Maximum)	I_D	8A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.58Ohm
Power Dissipation (Maximum)	P_D	37.9W
Drain-Source Capacitance		550pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		16nC

KP8N60F MOSFET Transistor Overview

The KP8N60F is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-220IS package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the KP8N60F MOSFET

Followings are the key electrical characteristics of the KP8N60F MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in KP8N60F MOSFET transistor is 600V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the KP8N60F MOSFET transistor is 30V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the KP8N60F MOSFET transistor is 8A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of KP8N60F MOSFET transistor when the transistor is fully turned on is 0.58 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the KP8N60F MOSFET transistor can comfortably transfer into heat without breaking is 37.9W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the KP8N60F MOSFET transistor is 550pF. This value influences to the switching speed of the KP8N60F MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the KP8N60F MOSFET transistor is switched on is 20nS. This is the rate at which KP8N60F MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the KP8N60F MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of KP8N60F MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the KP8N60F MOSFET transistor. You can download the official KP8N60F MOSFET transistor datasheet to get more infromation about this transistor.

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