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IXTR90P10P MOSFET Transistor

The IXTR90P10P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTR90P10P transistor as follows.

Circuit diagram symbol of the IXTR90P10P transistor

IXTR90P10P Transistor Specification

Transistor Code IXTR90P10P
Transistor Type MOSFET
Control Channel Type P-Channel
Package ISOPLUS247
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 57A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027Ohm
Power Dissipation (Maximum) PD 190W
Operating Junction Temperature (Maximum) 150°C
Rise Time 144nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 120nC

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