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IXTQ100N25P MOSFET Transistor

The IXTQ100N25P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ100N25P transistor as follows.

Circuit diagram symbol of the IXTQ100N25P transistor

IXTQ100N25P Transistor Specification

Transistor Code IXTQ100N25P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3P
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027Ohm
Power Dissipation (Maximum) PD 600W
Operating Junction Temperature (Maximum) 150°C
Rise Time 200nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 185nC

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