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IXTM7N45A MOSFET Transistor

The IXTM7N45A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTM7N45A transistor as follows.

Circuit diagram symbol of the IXTM7N45A transistor

IXTM7N45A Transistor Specification

Transistor Code IXTM7N45A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 450V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.85Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 155pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 4V

IXTM7N45A MOSFET Transistor Overview

The IXTM7N45A is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO3 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IXTM7N45A MOSFET

Followings are the key electrical characteristics of the IXTM7N45A MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IXTM7N45A MOSFET transistor is 450V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the IXTM7N45A MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IXTM7N45A MOSFET transistor is 7A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IXTM7N45A MOSFET transistor when the transistor is fully turned on is 0.85 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IXTM7N45A MOSFET transistor can comfortably transfer into heat without breaking is 125W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the IXTM7N45A MOSFET transistor is 155pF. This value influences to the switching speed of the IXTM7N45A MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IXTM7N45A MOSFET transistor is switched on is 20nS. This is the rate at which IXTM7N45A MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the IXTM7N45A MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of IXTM7N45A MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the IXTM7N45A MOSFET transistor. You can download the official IXTM7N45A MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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