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IXTH15N70 MOSFET Transistor

The IXTH15N70 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH15N70 transistor as follows.

Circuit diagram symbol of the IXTH15N70 transistor

IXTH15N70 Transistor Specification

Transistor Code IXTH15N70
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247AD
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.45Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 420pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 43nS
Gate-Threshold Voltage (Maximum) 4.5V

IXTH15N70 MOSFET Transistor Overview

The IXTH15N70 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-247AD package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IXTH15N70 MOSFET

Followings are the key electrical characteristics of the IXTH15N70 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IXTH15N70 MOSFET transistor is 700V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the IXTH15N70 MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IXTH15N70 MOSFET transistor is 15A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IXTH15N70 MOSFET transistor when the transistor is fully turned on is 0.45 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IXTH15N70 MOSFET transistor can comfortably transfer into heat without breaking is 300W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the IXTH15N70 MOSFET transistor is 420pF. This value influences to the switching speed of the IXTH15N70 MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IXTH15N70 MOSFET transistor is switched on is 43nS. This is the rate at which IXTH15N70 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the IXTH15N70 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of IXTH15N70 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the IXTH15N70 MOSFET transistor. You can download the official IXTH15N70 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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