IXFR34N80 MOSFET Transistor

The IXFR34N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR34N80 transistor as follows.

IXFR34N80 Transistor Specification

Transistor Code		IXFR34N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS247
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	417W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		270nC

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