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IXFH50N20 MOSFET Transistor

The IXFH50N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFH50N20 transistor as follows.

Circuit diagram symbol of the IXFH50N20 transistor

IXFH50N20 Transistor Specification

Transistor Code IXFH50N20
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.045Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 190nC

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