IRLM210A MOSFET Transistor

The IRLM210A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLM210A transistor as follows.

IRLM210A Transistor Specification

Transistor Code		IRLM210A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.77A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	1.8W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		2V

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