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IRL2203N MOSFET Transistor

The IRL2203N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRL2203N transistor as follows.

Circuit diagram symbol of the IRL2203N transistor

IRL2203N Transistor Specification

Transistor Code IRL2203N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 130W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 40nC

IRL2203N MOSFET Transistor Overview

The IRL2203N is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO220AB package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IRL2203N MOSFET

Followings are the key electrical characteristics of the IRL2203N MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IRL2203N MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IRL2203N MOSFET transistor is 100A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IRL2203N MOSFET transistor when the transistor is fully turned on is 0.007 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IRL2203N MOSFET transistor can comfortably transfer into heat without breaking is 130W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IRL2203N MOSFET transistor is switched on is . This is the rate at which IRL2203N MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the IRL2203N MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of IRL2203N MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the IRL2203N MOSFET transistor. You can download the official IRL2203N MOSFET transistor datasheet to get more infromation about this transistor.

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