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IRHQ567110 MOSFET Transistor

The IRHQ567110 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRHQ567110 transistor as follows.

Circuit diagram symbol of the IRHQ567110 transistor

IRHQ567110 Transistor Specification

Transistor Code IRHQ567110
Transistor Type MOSFET
Control Channel Type NP-Channel
Package LCC28
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.6(2.8)A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.27(0.96)Ohm
Power Dissipation (Maximum) PD 12W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V

IRHQ567110 MOSFET Transistor Overview

Key Electrical Characteristics of the IRHQ567110 MOSFET

Followings are the key electrical characteristics of the IRHQ567110 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IRHQ567110 MOSFET transistor is 100V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the IRHQ567110 MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IRHQ567110 MOSFET transistor is 4.6(2.8)A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IRHQ567110 MOSFET transistor when the transistor is fully turned on is 0.27(0.96) Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IRHQ567110 MOSFET transistor can comfortably transfer into heat without breaking is 12W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IRHQ567110 MOSFET transistor is switched on is . This is the rate at which IRHQ567110 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the IRHQ567110 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of IRHQ567110 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the IRHQ567110 MOSFET transistor. You can download the official IRHQ567110 MOSFET transistor datasheet to get more infromation about this transistor.

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