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IRFB4115 MOSFET Transistor

The IRFB4115 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB4115 transistor as follows.

Circuit diagram symbol of the IRFB4115 transistor

IRFB4115 Transistor Specification

Transistor Code IRFB4115
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 104A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.011Ohm
Power Dissipation (Maximum) PD 380W
Total Gate Charge 77nC

IRFB4115 MOSFET Transistor Overview

The IRFB4115 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO220AB package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IRFB4115 MOSFET

Followings are the key electrical characteristics of the IRFB4115 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IRFB4115 MOSFET transistor is 150V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the IRFB4115 MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IRFB4115 MOSFET transistor is 104A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IRFB4115 MOSFET transistor when the transistor is fully turned on is 0.011 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IRFB4115 MOSFET transistor can comfortably transfer into heat without breaking is 380W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IRFB4115 MOSFET transistor is switched on is . This is the rate at which IRFB4115 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the IRFB4115 MOSFET transistor. You can download the official IRFB4115 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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