IRF7Y1405CM MOSFET Transistor

The IRF7Y1405CM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7Y1405CM transistor as follows.

IRF7Y1405CM Transistor Specification

Transistor Code		IRF7Y1405CM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257AA
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0153Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		1300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		200nC

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