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IRF7807ZPBF MOSFET Transistor

The IRF7807ZPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7807ZPBF transistor as follows.

Circuit diagram symbol of the IRF7807ZPBF transistor

IRF7807ZPBF Transistor Specification

Transistor Code IRF7807ZPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0138Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 190pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6.2nS
Gate-Threshold Voltage (Maximum) 2.25V
Total Gate Charge 7.2nC

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