IRF7464PBF MOSFET Transistor

The IRF7464PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7464PBF transistor as follows.

IRF7464PBF Transistor Specification

Transistor Code		IRF7464PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.73Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		52pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.5nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		9.5nC

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