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IPS118N10NG MOSFET Transistor

The IPS118N10NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPS118N10NG transistor as follows.

Circuit diagram symbol of the IPS118N10NG transistor

IPS118N10NG Transistor Specification

Transistor Code IPS118N10NG
Transistor Type MOSFET
Control Channel Type N-Channel
Package IPAK-SL_TO251-SL
Drain-Source Voltage (Maximum) VDS 100V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0118Ohm
Power Dissipation (Maximum) PD 125W
Total Gate Charge 49nC

IPS118N10NG MOSFET Transistor Overview

The IPS118N10NG is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a IPAK-SL_TO251-SL package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IPS118N10NG MOSFET

Followings are the key electrical characteristics of the IPS118N10NG MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IPS118N10NG MOSFET transistor is 100V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IPS118N10NG MOSFET transistor is 75A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IPS118N10NG MOSFET transistor when the transistor is fully turned on is 0.0118 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IPS118N10NG MOSFET transistor can comfortably transfer into heat without breaking is 125W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IPS118N10NG MOSFET transistor is switched on is . This is the rate at which IPS118N10NG MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the IPS118N10NG MOSFET transistor. You can download the official IPS118N10NG MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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