IPB120N06S4-03 MOSFET Transistor

The IPB120N06S4-03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB120N06S4-03 transistor as follows.

IPB120N06S4-03 Transistor Specification

Transistor Code		IPB120N06S4-03
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PGTO263
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0028Ohm
Power Dissipation (Maximum)	PD	167W
Total Gate Charge		160nC

IPB120N06S4-03 MOSFET Transistor Overview

The IPB120N06S4-03 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a PGTO263 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IPB120N06S4-03 MOSFET

Followings are the key electrical characteristics of the IPB120N06S4-03 MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in IPB120N06S4-03 MOSFET transistor is 60V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the IPB120N06S4-03 MOSFET transistor is 120A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of IPB120N06S4-03 MOSFET transistor when the transistor is fully turned on is 0.0028 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the IPB120N06S4-03 MOSFET transistor can comfortably transfer into heat without breaking is 167W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Rise Time

The time that the drain current or output voltage increases between low to high when the IPB120N06S4-03 MOSFET transistor is switched on is . This is the rate at which IPB120N06S4-03 MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

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