The HUF75321S3S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the HUF75321S3S transistor as follows.
| Transistor Code | HUF75321S3S | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | TP262AB | |
| Drain-Source Voltage (Maximum) | VDS | 55V |
| Gate-Source Voltage (Maximum) | VGS | 20V |
| Drain Current (Maximum) | ID | 35A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.032Ohm |
| Power Dissipation (Maximum) | PD | 70W |
| Drain-Source Capacitance | 709pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Gate-Threshold Voltage (Maximum) | 4V | |
| Total Gate Charge | 44nC | |
The HUF75321S3S is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.
This device comes in a TP262AB package, making it suitable for projects that require moderate power handling and reliable switching performance.
Followings are the key electrical characteristics of the HUF75321S3S MOSFET transistor
The maximum drain-source voltage that can safely block between drain and source in HUF75321S3S MOSFET transistor is 55V.
This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.
The maximum safe voltage that can be used between the gate and source of the HUF75321S3S MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.
The maximum continuous current flowing between the drain and source of the HUF75321S3S MOSFET transistor is 35A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.
The internal resistance between the drain and source of HUF75321S3S MOSFET transistor when the transistor is fully turned on is 0.032 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.
The maximum power that the HUF75321S3S MOSFET transistor can comfortably transfer into heat without breaking is 70W. This indicates the amount of power that can safely be dissipated to the device as heat.
The capacitance between drain and source of the HUF75321S3S MOSFET transistor is 709pF. This value influences to the switching speed of the HUF75321S3S MOSFET transistor and the high-frequency performance.
This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.
The time that the drain current or output voltage increases between low to high when the HUF75321S3S MOSFET transistor is switched on is . This is the rate at which HUF75321S3S MOSFET transistor switches on.
This shows how fast the MOSFET transistor switched on.
The maximum internal temperature of the semiconductor junction of HUF75321S3S MOSFET transistor can be safely operated at the 150°C without damaging the transistor.
UXPython is not the creator or an official representative of the HUF75321S3S MOSFET transistor. You can download the official HUF75321S3S MOSFET transistor datasheet to get more infromation about this transistor.
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