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HEPF2007A MOSFET Transistor

The HEPF2007A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HEPF2007A transistor as follows.

Circuit diagram symbol of the HEPF2007A transistor

HEPF2007A Transistor Specification

Transistor Code HEPF2007A
Transistor Type MOSFET
Control Channel Type N-Channel
Package MACROH
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.03A
Drain-Source On-State Resistance (Maximum) RDS(on) 200Ohm
Power Dissipation (Maximum) PD 0.5W
Operating Junction Temperature (Maximum) 175°C

HEPF2007A MOSFET Transistor Overview

The HEPF2007A is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a MACROH package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the HEPF2007A MOSFET

Followings are the key electrical characteristics of the HEPF2007A MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in HEPF2007A MOSFET transistor is 25V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the HEPF2007A MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the HEPF2007A MOSFET transistor is 0.03A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of HEPF2007A MOSFET transistor when the transistor is fully turned on is 200 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the HEPF2007A MOSFET transistor can comfortably transfer into heat without breaking is 0.5W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the HEPF2007A MOSFET transistor is switched on is . This is the rate at which HEPF2007A MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the HEPF2007A MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of HEPF2007A MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the HEPF2007A MOSFET transistor. You can download the official HEPF2007A MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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