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HAF2012 MOSFET Transistor

The HAF2012 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAF2012 transistor as follows.

Circuit diagram symbol of the HAF2012 transistor

HAF2012 Transistor Specification

Transistor Code HAF2012
Transistor Type MOSFET
Control Channel Type N-Channel
Package LDPAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 16V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C

UXPython is not the creator or an official representative of the HAF2012 MOSFET transistor. You can download the official HAF2012 MOSFET transistor datasheet to get more infromation about this transistor.

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