HAF1003S MOSFET Transistor

The HAF1003S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAF1003S transistor as follows.

HAF1003S Transistor Specification

Transistor Code		HAF1003S
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		44500nS

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