H7N0312LD MOSFET Transistor

The H7N0312LD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H7N0312LD transistor as follows.

H7N0312LD Transistor Specification

Transistor Code		H7N0312LD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	85A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0026Ohm
Power Dissipation (Maximum)	PD	125W
Total Gate Charge		115nC

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