H5N1503P MOSFET Transistor

The H5N1503P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H5N1503P transistor as follows.

H5N1503P Transistor Specification

Transistor Code		H5N1503P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		770pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		290nS
Total Gate Charge		135nC

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