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G1003A MOSFET Transistor

The G1003A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G1003A transistor as follows.

G1003A Transistor Specification

Transistor Code		G1003A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23-3L
Transistor SMD Code		G1003A
Drain-Source Voltage (Maximum)	V_DS	100V
Gate-Source Voltage (Maximum)	V_GS	20V
Drain Current (Maximum)	I_D	5A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.145Ohm
Power Dissipation (Maximum)	P_D	3W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.4nS

G1003A MOSFET Transistor Overview

The G1003A is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT23-3L package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the G1003A MOSFET

Followings are the key electrical characteristics of the G1003A MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in G1003A MOSFET transistor is 100V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the G1003A MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the G1003A MOSFET transistor is 5A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of G1003A MOSFET transistor when the transistor is fully turned on is 0.145 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the G1003A MOSFET transistor can comfortably transfer into heat without breaking is 3W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the G1003A MOSFET transistor is 120pF. This value influences to the switching speed of the G1003A MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the G1003A MOSFET transistor is switched on is 7.4nS. This is the rate at which G1003A MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the G1003A MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of G1003A MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the G1003A MOSFET transistor. You can download the official G1003A MOSFET transistor datasheet to get more infromation about this transistor.

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