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FTK5N80P MOSFET Transistor

The FTK5N80P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTK5N80P transistor as follows.

Circuit diagram symbol of the FTK5N80P transistor

FTK5N80P Transistor Specification

Transistor Code FTK5N80P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.7Ohm
Power Dissipation (Maximum) PD 142W
Drain-Source Capacitance 77pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 85nS

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