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FS100VSJ-03F MOSFET Transistor

The FS100VSJ-03F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FS100VSJ-03F transistor as follows.

Circuit diagram symbol of the FS100VSJ-03F transistor

FS100VSJ-03F Transistor Specification

Transistor Code FS100VSJ-03F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220S
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.004Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 2300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 170nS
Gate-Threshold Voltage (Maximum) 2V

FS100VSJ-03F MOSFET Transistor Overview

The FS100VSJ-03F is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-220S package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the FS100VSJ-03F MOSFET

Followings are the key electrical characteristics of the FS100VSJ-03F MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in FS100VSJ-03F MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the FS100VSJ-03F MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the FS100VSJ-03F MOSFET transistor is 100A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of FS100VSJ-03F MOSFET transistor when the transistor is fully turned on is 0.004 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the FS100VSJ-03F MOSFET transistor can comfortably transfer into heat without breaking is 125W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the FS100VSJ-03F MOSFET transistor is 2300pF. This value influences to the switching speed of the FS100VSJ-03F MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the FS100VSJ-03F MOSFET transistor is switched on is 170nS. This is the rate at which FS100VSJ-03F MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the FS100VSJ-03F MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of FS100VSJ-03F MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the FS100VSJ-03F MOSFET transistor. You can download the official FS100VSJ-03F MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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