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FDPC8012S MOSFET Transistor

The FDPC8012S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDPC8012S transistor as follows.

Circuit diagram symbol of the FDPC8012S transistor

FDPC8012S Transistor Specification

Transistor Code FDPC8012S
Transistor Type MOSFET
Control Channel Type N-Channel
Package PQFN3.3X3.3
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 1.6W
Operating Junction Temperature (Maximum) 150°C

FDPC8012S MOSFET Transistor Overview

The FDPC8012S is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a PQFN3.3X3.3 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the FDPC8012S MOSFET

Followings are the key electrical characteristics of the FDPC8012S MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in FDPC8012S MOSFET transistor is 25V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the FDPC8012S MOSFET transistor is 12V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the FDPC8012S MOSFET transistor is 13A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of FDPC8012S MOSFET transistor when the transistor is fully turned on is 0.007 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the FDPC8012S MOSFET transistor can comfortably transfer into heat without breaking is 1.6W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the FDPC8012S MOSFET transistor is switched on is . This is the rate at which FDPC8012S MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the FDPC8012S MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of FDPC8012S MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the FDPC8012S MOSFET transistor. You can download the official FDPC8012S MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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