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FDMA6676PZ MOSFET Transistor

The FDMA6676PZ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMA6676PZ transistor as follows.

FDMA6676PZ Transistor Specification

Transistor Code		FDMA6676PZ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICROFET2X2
Transistor SMD Code		675
Drain-Source Voltage (Maximum)	V_DS	30V
Gate-Source Voltage (Maximum)	V_GS	25V
Drain Current (Maximum)	I_D	11A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.0135Ohm
Power Dissipation (Maximum)	P_D	2.4W
Drain-Source Capacitance		477pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		2.6V

FDMA6676PZ MOSFET Transistor Overview

The FDMA6676PZ is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a MICROFET2X2 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the FDMA6676PZ MOSFET

Followings are the key electrical characteristics of the FDMA6676PZ MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in FDMA6676PZ MOSFET transistor is 30V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the FDMA6676PZ MOSFET transistor is 25V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the FDMA6676PZ MOSFET transistor is 11A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of FDMA6676PZ MOSFET transistor when the transistor is fully turned on is 0.0135 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the FDMA6676PZ MOSFET transistor can comfortably transfer into heat without breaking is 2.4W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the FDMA6676PZ MOSFET transistor is 477pF. This value influences to the switching speed of the FDMA6676PZ MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the FDMA6676PZ MOSFET transistor is switched on is 19nS. This is the rate at which FDMA6676PZ MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the FDMA6676PZ MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of FDMA6676PZ MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the FDMA6676PZ MOSFET transistor. You can download the official FDMA6676PZ MOSFET transistor datasheet to get more infromation about this transistor.

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