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FDBL0330N80 MOSFET Transistor

The FDBL0330N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDBL0330N80 transistor as follows.

Circuit diagram symbol of the FDBL0330N80 transistor

FDBL0330N80 Transistor Specification

Transistor Code FDBL0330N80
Transistor Type MOSFET
Control Channel Type N-Channel
Package MO-299A
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 220A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.003Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 1030pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 34nS
Gate-Threshold Voltage (Maximum) 4V

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