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BUZ360 MOSFET Transistor

The BUZ360 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ360 transistor as follows.

Circuit diagram symbol of the BUZ360 transistor

BUZ360 Transistor Specification

Transistor Code BUZ360
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-218AA
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 3Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Gate-Threshold Voltage (Maximum) 4V

UXPython is not the creator or an official representative of the BUZ360 MOSFET transistor. You can download the official BUZ360 MOSFET transistor datasheet to get more infromation about this transistor.

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