free stats

Home » Electronics » FET » BUK7K35-60E Transistor

BUK7K35-60E MOSFET Transistor

The BUK7K35-60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK7K35-60E transistor as follows.

Circuit diagram symbol of the BUK7K35-60E transistor

BUK7K35-60E Transistor Specification

Transistor Code BUK7K35-60E
Transistor Type MOSFET
Control Channel Type N-Channel
Package LFPAK56D
Transistor SMD Code 73560E
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 38W
Drain-Source Capacitance 97pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 12.5nC

BUK7K35-60E MOSFET Transistor Overview

The BUK7K35-60E is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a LFPAK56D package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the BUK7K35-60E MOSFET

Followings are the key electrical characteristics of the BUK7K35-60E MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in BUK7K35-60E MOSFET transistor is 60V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the BUK7K35-60E MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the BUK7K35-60E MOSFET transistor is 20.7A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of BUK7K35-60E MOSFET transistor when the transistor is fully turned on is 0.03 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the BUK7K35-60E MOSFET transistor can comfortably transfer into heat without breaking is 38W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the BUK7K35-60E MOSFET transistor is 97pF. This value influences to the switching speed of the BUK7K35-60E MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the BUK7K35-60E MOSFET transistor is switched on is 7nS. This is the rate at which BUK7K35-60E MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the BUK7K35-60E MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of BUK7K35-60E MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the BUK7K35-60E MOSFET transistor. You can download the official BUK7K35-60E MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

BUK7K12-60E BUK7K12-60E MOSFET Transistor BUK7K17-60E BUK7K17-60E MOSFET Transistor BUK7K18-40E BUK7K18-40E MOSFET Transistor BUK7K25-40E BUK7K25-40E MOSFET Transistor BUK7K52-60E BUK7K52-60E MOSFET Transistor BUK7K5R1-30E BUK7K5R1-30E MOSFET Transistor BUK7K5R6-30E BUK7K5R6-30E MOSFET Transistor BUK7K6R2-40E BUK7K6R2-40E MOSFET Transistor BUK7K6R8-40E BUK7K6R8-40E MOSFET Transistor BUK7K8R7-40E BUK7K8R7-40E MOSFET Transistor BUK9K12-60E BUK9K12-60E MOSFET Transistor BUK9K134-100E BUK9K134-100E MOSFET Transistor BUK9K17-60E BUK9K17-60E MOSFET Transistor BUK9K18-40E BUK9K18-40E MOSFET Transistor BUK9K25-40E BUK9K25-40E MOSFET Transistor BUK9K29-100E BUK9K29-100E MOSFET Transistor BUK9K32-100E BUK9K32-100E MOSFET Transistor BUK9K35-60E BUK9K35-60E MOSFET Transistor BUK9K45-100E BUK9K45-100E MOSFET Transistor BUK9K52-60E BUK9K52-60E MOSFET Transistor