BUK7905-40AIE MOSFET Transistor

The BUK7905-40AIE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK7905-40AIE transistor as follows.

BUK7905-40AIE Transistor Specification

Transistor Code		BUK7905-40AIE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO2205
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	272W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		127nC

BUK7905-40AIE MOSFET Transistor Overview

The BUK7905-40AIE is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO2205 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the BUK7905-40AIE MOSFET

Followings are the key electrical characteristics of the BUK7905-40AIE MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in BUK7905-40AIE MOSFET transistor is 40V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the BUK7905-40AIE MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the BUK7905-40AIE MOSFET transistor is 75A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of BUK7905-40AIE MOSFET transistor when the transistor is fully turned on is 0.005 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the BUK7905-40AIE MOSFET transistor can comfortably transfer into heat without breaking is 272W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Rise Time

The time that the drain current or output voltage increases between low to high when the BUK7905-40AIE MOSFET transistor is switched on is . This is the rate at which BUK7905-40AIE MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the BUK7905-40AIE MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of BUK7905-40AIE MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

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