BS107PT MOSFET Transistor

The BS107PT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BS107PT transistor as follows.

BS107PT Transistor Specification

Transistor Code		BS107PT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ELINE
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	28Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		150°C

BS107PT MOSFET Transistor Overview

The BS107PT is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a ELINE package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the BS107PT MOSFET

Followings are the key electrical characteristics of the BS107PT MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in BS107PT MOSFET transistor is 200V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the BS107PT MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the BS107PT MOSFET transistor is 0.12A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of BS107PT MOSFET transistor when the transistor is fully turned on is 28 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the BS107PT MOSFET transistor can comfortably transfer into heat without breaking is 0.5W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Rise Time

The time that the drain current or output voltage increases between low to high when the BS107PT MOSFET transistor is switched on is . This is the rate at which BS107PT MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the BS107PT MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of BS107PT MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the BS107PT MOSFET transistor. You can download the official BS107PT MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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