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BLF888BS MOSFET Transistor

The BLF888BS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BLF888BS transistor as follows.

Circuit diagram symbol of the BLF888BS transistor

BLF888BS Transistor Specification

Transistor Code BLF888BS
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT539B
Drain-Source Voltage (Maximum) VDS 50V
Drain Current (Maximum) ID 38A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.12Ohm
Power Dissipation (Maximum) PD 650W

BLF888BS MOSFET Transistor Overview

The BLF888BS is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT539B package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the BLF888BS MOSFET

Followings are the key electrical characteristics of the BLF888BS MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in BLF888BS MOSFET transistor is 50V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the BLF888BS MOSFET transistor is 38A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of BLF888BS MOSFET transistor when the transistor is fully turned on is 0.12 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the BLF888BS MOSFET transistor can comfortably transfer into heat without breaking is 650W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the BLF888BS MOSFET transistor is switched on is . This is the rate at which BLF888BS MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the BLF888BS MOSFET transistor. You can download the official BLF888BS MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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