free stats

Home » Electronics » FET » BLF6G22LS-40P Transistor

BLF6G22LS-40P MOSFET Transistor

The BLF6G22LS-40P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BLF6G22LS-40P transistor as follows.

Circuit diagram symbol of the BLF6G22LS-40P transistor

BLF6G22LS-40P Transistor Specification

Transistor Code BLF6G22LS-40P
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT1121B
Drain-Source Voltage (Maximum) VDS 28V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.37Ohm
Power Dissipation (Maximum) PD 40W

BLF6G22LS-40P MOSFET Transistor Overview

The BLF6G22LS-40P is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT1121B package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the BLF6G22LS-40P MOSFET

Followings are the key electrical characteristics of the BLF6G22LS-40P MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in BLF6G22LS-40P MOSFET transistor is 28V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the BLF6G22LS-40P MOSFET transistor is 16A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of BLF6G22LS-40P MOSFET transistor when the transistor is fully turned on is 0.37 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the BLF6G22LS-40P MOSFET transistor can comfortably transfer into heat without breaking is 40W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the BLF6G22LS-40P MOSFET transistor is switched on is . This is the rate at which BLF6G22LS-40P MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the BLF6G22LS-40P MOSFET transistor. You can download the official BLF6G22LS-40P MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

BLF6G13LS-250P BLF6G13LS-250P MOSFET Transistor BLF6G27LS-40P BLF6G27LS-40P MOSFET Transistor BLF7G20LS-140P BLF7G20LS-140P MOSFET Transistor BLF7G20LS-90P BLF7G20LS-90P MOSFET Transistor BLF7G21LS-160P BLF7G21LS-160P MOSFET Transistor BLF7G22LS-100P BLF7G22LS-100P MOSFET Transistor BLF7G27LS-75P BLF7G27LS-75P MOSFET Transistor BLF7G27LS-90P BLF7G27LS-90P MOSFET Transistor BLF884PS BLF884PS MOSFET Transistor