free stats

Home » Electronics » FET » BLF642 Transistor

BLF642 MOSFET Transistor

The BLF642 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BLF642 transistor as follows.

Circuit diagram symbol of the BLF642 transistor

BLF642 Transistor Specification

Transistor Code BLF642
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT467C
Drain-Source Voltage (Maximum) VDS 32V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 35W

BLF642 MOSFET Transistor Overview

The BLF642 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT467C package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the BLF642 MOSFET

Followings are the key electrical characteristics of the BLF642 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in BLF642 MOSFET transistor is 32V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the BLF642 MOSFET transistor is 9A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of BLF642 MOSFET transistor when the transistor is fully turned on is 0.3 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the BLF642 MOSFET transistor can comfortably transfer into heat without breaking is 35W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the BLF642 MOSFET transistor is switched on is . This is the rate at which BLF642 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the BLF642 MOSFET transistor. You can download the official BLF642 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

BLA1011-10 BLA1011-10 MOSFET Transistor BLF1046 BLF1046 MOSFET Transistor BLF2043F BLF2043F MOSFET Transistor BLF3G21-30 BLF3G21-30 MOSFET Transistor BLF571 BLF571 MOSFET Transistor BLF871 BLF871 MOSFET Transistor BLF881 BLF881 MOSFET Transistor BLL1214-35 BLL1214-35 MOSFET Transistor BLL6H0514-25 BLL6H0514-25 MOSFET Transistor