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AUIRFU5305 MOSFET Transistor

The AUIRFU5305 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AUIRFU5305 transistor as follows.

Circuit diagram symbol of the AUIRFU5305 transistor

AUIRFU5305 Transistor Specification

Transistor Code AUIRFU5305
Transistor Type MOSFET
Control Channel Type P-Channel
Package IPAK
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 31A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.065Ohm
Power Dissipation (Maximum) PD 110W
Total Gate Charge 63nC

AUIRFU5305 MOSFET Transistor Overview

The AUIRFU5305 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a IPAK package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the AUIRFU5305 MOSFET

Followings are the key electrical characteristics of the AUIRFU5305 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in AUIRFU5305 MOSFET transistor is 55V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the AUIRFU5305 MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the AUIRFU5305 MOSFET transistor is 31A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of AUIRFU5305 MOSFET transistor when the transistor is fully turned on is 0.065 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the AUIRFU5305 MOSFET transistor can comfortably transfer into heat without breaking is 110W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the AUIRFU5305 MOSFET transistor is switched on is . This is the rate at which AUIRFU5305 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the AUIRFU5305 MOSFET transistor. You can download the official AUIRFU5305 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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