APT1002RCN MOSFET Transistor

The APT1002RCN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT1002RCN transistor as follows.

APT1002RCN Transistor Specification

Transistor Code		APT1002RCN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	150W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		66nC

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