APQ09SN90AD MOSFET Transistor

The APQ09SN90AD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ09SN90AD transistor as follows.

APQ09SN90AD Transistor Specification

Transistor Code		APQ09SN90AD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	850V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	280W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		5V

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