AP10TN012LMT MOSFET Transistor

The AP10TN012LMT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10TN012LMT transistor as follows.

AP10TN012LMT Transistor Specification

Transistor Code		AP10TN012LMT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		825pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		49nS
Gate-Threshold Voltage (Maximum)		2.4V

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