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AOV11S60 MOSFET Transistor

The AOV11S60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOV11S60 transistor as follows.

Circuit diagram symbol of the AOV11S60 transistor

AOV11S60 Transistor Specification

Transistor Code AOV11S60
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN8X8
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 156W
Drain-Source Capacitance 37.3pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 4.1V

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